- Operating Temperature :
- Part Status :
- FET Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET P-CH 120V 15A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK (TO-262) | P-Channel | 120V | 1100pF @ 25V | 3.75W (Ta), 100W (Tc) | 15A (Tc) | 10V | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 900V 4.2A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I2PAK (TO-262) | N-Channel | 900V | 1100pF @ 25V | 3.13W (Ta), 140W (Tc) | 4.2A (Tc) | 10V | 3.3 Ohm @ 2.1A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | - |