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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NTTFS4929N
RFQ
ON Semiconductor MOSFET P-CH 200V 12.6A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3PN P-Channel 200V 1200pF @ 25V 150W (Tc) 12.6A (Tc) 10V 470 mOhm @ 6.3A, 10V 5V @ 250µA 40nC @ 10V ±30V -
FQA12P20
RFQ
ON Semiconductor MOSFET P-CH 200V 12.6A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3PN P-Channel 200V 1200pF @ 25V 150W (Tc) 12.6A (Tc) 10V 470 mOhm @ 6.3A, 10V 5V @ 250µA 40nC @ 10V ±30V -
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