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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NZH16C
RFQ
ON Semiconductor MOSFET N-CH 700V 6.4A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 700V 1400pF @ 25V 152W (Tc) 6.4A (Tc) 10V 1.5 Ohm @ 3.2A, 10V 5V @ 250µA 40nC @ 10V ±30V -
NZH10C
RFQ
ON Semiconductor MOSFET N-CH 600V 7.7A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 600V 1430pF @ 25V 152W (Tc) 7.7A (Tc) 10V 1 Ohm @ 3.9A, 10V 5V @ 250µA 38nC @ 10V ±30V -
FQA6N70
RFQ
ON Semiconductor MOSFET N-CH 700V 6.4A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 700V 1400pF @ 25V 152W (Tc) 6.4A (Tc) 10V 1.5 Ohm @ 3.2A, 10V 5V @ 250µA 40nC @ 10V ±30V -
FQA7N60
RFQ
ON Semiconductor MOSFET N-CH 600V 7.7A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P N-Channel 600V 1430pF @ 25V 152W (Tc) 7.7A (Tc) 10V 1 Ohm @ 3.9A, 10V 5V @ 250µA 38nC @ 10V ±30V -
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