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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
P80C32UFBB
RFQ
ON Semiconductor MOSFET N-CH 25V 15.7A IPAK TO-251-3 Stub Leads, IPak - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 25V 4600pF @ 12V 1.43W (Ta), 93.75W (Tc) 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6 mOhm @ 30A, 10V 2.5V @ 250µA 49.2nC @ 4.5V ±20V
P80C32UFAA
RFQ
ON Semiconductor MOSFET N-CH 25V 15.7A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 25V 4600pF @ 12V 1.43W (Ta), 93.75W (Tc) 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6 mOhm @ 30A, 10V 2.5V @ 250µA 49.2nC @ 4.5V ±20V
P6SMBJ5.0A-T3
RFQ
ON Semiconductor MOSFET N-CH 30V 14.5A IPAK TO-251-3 Stub Leads, IPak - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 30V 4490pF @ 12V 1.43W (Ta), 93.75W (Tc) 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4 mOhm @ 30A, 10V 2.5V @ 250µA 40nC @ 4.5V ±20V
P6SMBJ5.0A
RFQ
ON Semiconductor MOSFET N-CH 30V 14.5A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 30V 4490pF @ 12V 1.43W (Ta), 93.75W (Tc) 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4 mOhm @ 30A, 10V 2.5V @ 250µA 40nC @ 4.5V ±20V
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