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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
PBSS301ND
RFQ
ON Semiconductor MOSFET N-CH 200V 2.7A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D-Pak N-Channel 200V 225pF @ 25V 2.5W (Ta), 26W (Tc) 2.7A (Tc) 10V 1.5 Ohm @ 1.35A, 10V 4V @ 250µA 9.3nC @ 10V ±30V
MST3M182VGC-LF-TZ
Per Unit
$0.4089
RFQ
ON Semiconductor MOSFET N-CH 520V 1.3A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs TO-251 (IPAK) N-Channel 520V 340pF @ 25V 2.5W (Ta), 26W (Tc) 1.3A (Tc) 10V 5.3 Ohm @ 650mA, 10V 4V @ 250µA 11nC @ 10V ±30V
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