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Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NE5514D
RFQ
ON Semiconductor MOSFET N-CH 200V 4A TO-126 TO-225AA, TO-126-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-126 N-Channel 200V 510pF @ 25V 12.8W (Tc) 4A (Tc) 10V 360 mOhm @ 2A, 10V 4V @ 250µA 26nC @ 10V ±30V -
NE5512N
RFQ
ON Semiconductor MOSFET N-CH 200V 4A TO-126 TO-225AA, TO-126-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-126 N-Channel 200V 490pF @ 25V 12.8W (Tc) 4A (Tc) 5V, 10V 360 mOhm @ 2A, 10V 2V @ 250µA 19nC @ 5V ±20V -
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