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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
MJ21193G/MJ21194G
Per Unit
$7.3100
RFQ
ON Semiconductor MOSFET N-CH 80V 160A TO-3P TO-3P-3, SC-65-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-3PN N-Channel 80V 7900pF @ 25V 375W (Tc) 160A (Tc) 10V 7 mOhm @ 80A, 10V 4V @ 250µA 290nC @ 10V ±25V -
MFRC63102HN
Per Unit
$2.6400
RFQ
ON Semiconductor MOSFET N-CH 40V 160A D2PAK-7 TO-263-7, D²Pak (6 Leads + Tab) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263) N-Channel 40V 11600pF @ 25V 283W (Tc) 160A (Tc) 10V 1.6 mOhm @ 80A, 10V 3V @ 250µA 167nC @ 10V ±20V -
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