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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NM93C06
RFQ
ON Semiconductor MOSFET N-CH 250V 3.6A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 250V 200pF @ 25V 3.13W (Ta), 52W (Tc) 3.6A (Tc) 10V 1.75 Ohm @ 1.8A, 10V 5V @ 250µA 5.6nC @ 10V ±30V -
NM27C010Q-150
RFQ
ON Semiconductor MOSFET N-CH 250V 3.6A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAK (TO-262) N-Channel 250V 200pF @ 25V 3.13W (Ta), 52W (Tc) 3.6A (Tc) 10V 1.75 Ohm @ 1.8A, 10V 5V @ 250µA 5.6nC @ 10V ±30V -
NE57811S
RFQ
ON Semiconductor MOSFET N-CH 250V 3.6A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 250V 200pF @ 25V 52W (Tc) 3.6A (Tc) 10V 1.75 Ohm @ 1.8A, 10V 5V @ 250µA 5.6nC @ 10V ±30V -
FQP4N25
RFQ
ON Semiconductor MOSFET N-CH 250V 3.6A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 250V 200pF @ 25V 52W (Tc) 3.6A (Tc) 10V 1.75 Ohm @ 1.8A, 10V 5V @ 250µA 5.6nC @ 10V ±30V -
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