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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NPC1002A2EV
RFQ
ON Semiconductor MOSFET P-CH 20V 4.5A BGA 9-WFBGA PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 9-BGA (2x2.1) P-Channel 20V 884pF @ 10V 1.8W (Ta) 4.5A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13nC @ 4.5V ±12V -
NCP81022SI4
RFQ
ON Semiconductor MOSFET P-CH 12V 3.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC P-Channel 12V 1850pF @ 9.6V 790mW (Ta) 3.4A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.15V @ 250µA 35nC @ 4.5V ±10V -
FDZ204P
RFQ
ON Semiconductor MOSFET P-CH 20V 4.5A BGA 9-WFBGA PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 9-BGA (2x2.1) P-Channel 20V 884pF @ 10V 1.8W (Ta) 4.5A (Ta) 2.5V, 4.5V 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13nC @ 4.5V ±12V -
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