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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET N-CH 1000V 1.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-Pak | N-Channel | 1000V | 520pF @ 25V | 2.5W (Ta), 50W (Tc) | 1.6A (Tc) | 10V | 9 Ohm @ 800mA, 10V | 5V @ 250µA | 15.5nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 1000V 1.6A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | N-Channel | 1000V | 520pF @ 25V | 2.5W (Ta), 50W (Tc) | 1.6A (Tc) | 10V | 9 Ohm @ 800mA, 10V | 5V @ 250µA | 15.5nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 1000V 1.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-Pak | N-Channel | 1000V | 520pF @ 25V | 2.5W (Ta), 50W (Tc) | 1.6A (Tc) | 10V | 9 Ohm @ 800mA, 10V | 5V @ 250µA | 15.5nC @ 10V | ±30V | - |