- Package / Case :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WDFN | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-WDFN (2x2) | P-Channel | 20V | 1100pF @ 16V | 700mW (Ta) | 3.5A (Ta) | 1.5V, 4.5V | 38 mOhm @ 3A, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | ±8V | |||||
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ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WDFN | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-WDFN (2x2) | P-Channel | 20V | 1100pF @ 16V | 700mW (Ta) | 3.5A (Ta) | 1.5V, 4.5V | 38 mOhm @ 3A, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | ±8V | |||||
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ON Semiconductor | MOSFET P-CH 20V 3A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | P-Channel | 20V | 1651pF @ 15V | 480mW (Ta) | 3A (Ta) | 1.8V, 4.5V | 38 mOhm @ 3A, 4.5V | 1V @ 250µA | 17.6nC @ 4.5V | ±8V |