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Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
N5208
Per Unit
$1.5830
RFQ
ON Semiconductor MOSFET N-CH 200V 39A TO220F TO-220-3 Full Pack - - MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F N-Channel 200V 2130pF @ 25V 37W (Tc) 39A (Tc) 10V 66 mOhm @ 19.5A, 10V 5V @ 250µA 49nC @ 10V ±30V -
ML6415ES
Per Unit
$2.3300
RFQ
ON Semiconductor MOSFET N-CH 200V 39A TO-220 TO-220-3 UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220-3 N-Channel 200V 2130pF @ 25V 251W (Tc) 39A (Tc) 10V 66 mOhm @ 19.5A, 10V 5V @ 250µA 49nC @ 10V ±30V -
MC74HC245DTR2G
Per Unit
$2.3800
RFQ
ON Semiconductor MOSFET N-CH 200V 39A TO-220F TO-220-3 Full Pack UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F N-Channel 200V 2130pF @ 25V 37W (Tc) 39A (Tc) 10V 66 mOhm @ 19.5A, 10V 5V @ 250µA 49nC @ 10V ±30V -
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