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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NM27C010Q-120
RFQ
ON Semiconductor MOSFET P-CH 60V 7A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK (TO-262) P-Channel 60V 295pF @ 25V 3.75W (Ta), 45W (Tc) 7A (Tc) 10V 410 mOhm @ 3.5A, 10V 4V @ 250µA 8.2nC @ 10V ±25V -
MJE13003L-C-TN3-R
Per Unit
$1.1900
RFQ
ON Semiconductor MOSFET P-CH 60V 7A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 P-Channel 60V 295pF @ 25V 45W (Tc) 7A (Tc) 10V 410 mOhm @ 3.5A, 10V 4V @ 250µA 8.2nC @ 10V ±25V -
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