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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NCP1052C
Per Unit
$3.6094
RFQ
ON Semiconductor FET ENGR DEV-NOT REL TO-220-3 PowerTrench® - MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 N-Channel 100V 5065pF @ 50V 2.4W (Ta), 150W (Tc) 128A (Tc) 10V 4.5 mOhm @ 100A, 10V 4V @ 310µA 68nC @ 10V ±20V -
NCP1027P65
Per Unit
$3.4890
RFQ
ON Semiconductor FET ENGR DEV-NOT REL TO-220-3 Full Pack PowerTrench® - MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220F-3 N-Channel 100V 5065pF @ 50V 2.4W (Ta), 37.5W (Tc) 128A (Tc) 10V 4.5 mOhm @ 100A, 10V 4V @ 310µA 68nC @ 10V ±20V -
NCN7201MTTWG
Per Unit
$3.2003
RFQ
ON Semiconductor FET ENGR DEV-NOT REL 8-PowerTDFN PowerTrench® - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Power56 N-Channel 80V 5350pF @ 40V 2.7W (Ta), 125W (Tc) 22A (Ta), 147A (Tc) 6V, 10V 3.1 mOhm @ 56A, 10V 4V @ 310µA 73nC @ 10V ±20V -
MPS-3128-015AA
Per Unit
$3.2003
RFQ
ON Semiconductor PTNG 80/20V IN 5X6CLIP 8-PowerTDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Power56 N-Channel 80V 5350pF @ 40V 2.7W (Ta), 125W (Tc) 22A (Ta), 147A (Tc) 6V, 10V 3.1 mOhm @ 56A, 10V 4V @ 310µA 73nC @ 10V ±20V -
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