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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PDTC114YE/DG
RFQ
ON Semiconductor INTEGRATED CIRCUIT TO-236-3, SC-59, SOT-23-3 PowerTrench® Bulk MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SuperSOT-3 P-Channel 60V 430pF @ 30V 500mW (Ta) 1.25A (Ta) 4.5V, 10V 170 mOhm @ 1.25A, 10V 3V @ 250µA 13.8nC @ 10V ±20V -
PCA9512AD+118
RFQ
ON Semiconductor MOSFET N-CH 500V 5.5A ATPAK ATPAK (2 leads+tab) - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete ATPAK N-Channel 500V 350pF @ 30V 70W (Tc) 5.5A (Ta) 10V 2 Ohm @ 2.75A, 10V - 13.8nC @ 10V ±30V -
MMBR911LT1
Per Unit
$0.1903
RFQ
ON Semiconductor MOSFET P-CH 60V 1.25A SSOT3 TO-236-3, SC-59, SOT-23-3 PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SuperSOT-3 P-Channel 60V 430pF @ 30V 500mW (Ta) 1.25A (Ta) 4.5V, 10V 170 mOhm @ 1.25A, 10V 3V @ 250µA 13.8nC @ 10V ±20V -
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