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Packaging :
Supplier Device Package :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
NMC27C128BQM-200
RFQ
ON Semiconductor MOSFET N-CH 200V 3.3A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAK (TO-262) N-Channel 200V 240pF @ 25V 3.1W (Ta), 33W (Tc) 3.3A (Tc) 5V 1.5 Ohm @ 1.65A, 5V 2V @ 250µA 9nC @ 5V ±20V
NM29A080M
RFQ
ON Semiconductor MOSFET N-CH 200V 3.3A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAK (TO-262) N-Channel 200V 240pF @ 25V 3.1W (Ta), 33W (Tc) 3.3A (Tc) 5V 1.5 Ohm @ 1.65A, 5V 2V @ 250µA 9nC @ 5V ±20V
NL27WZ14DFT1G
RFQ
ON Semiconductor MOSFET N-CH 200V 3.3A TO-220 TO-220-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 200V 240pF @ 25V 33W (Tc) 3.3A (Tc) 5V 1.5 Ohm @ 1.65A, 5V 2V @ 250µA 9nC @ 5V ±20V
IRL610A
RFQ
ON Semiconductor MOSFET N-CH 200V 3.3A TO-220 TO-220-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 200V 240pF @ 25V 33W (Tc) 3.3A (Tc) 5V 1.5 Ohm @ 1.65A, 5V 2V @ 250µA 9nC @ 5V ±20V
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