Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PBSS5350D
RFQ
ON Semiconductor MOSFET N-CH 25V 49A SGL IPAK TO-251-3 Stub Leads, IPak - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 25V 990pF @ 12V 1.27W (Ta), 36.6W (Tc) 9.2A (Ta), 49A (Tc) - 9.3 mOhm @ 30A, 10V 2.5V @ 250µA 17.8nC @ 10V - -
MC34063-1.2A
Per Unit
$1.4782
RFQ
ON Semiconductor MOSFET N-CH 600V 9A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 SupreMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-Pak N-Channel 600V 1000pF @ 100V 92.6W (Tc) 9A (Tc) 10V 385 mOhm @ 4.5A, 10V 5V @ 250µA 17.8nC @ 10V ±30V -
Page 1 / 1