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Package / Case :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
MMFT2955ET1G
Per Unit
$20.0400
RFQ
ON Semiconductor MOSFET N-CH 650V 75A TO247 TO-247-3 SuperFET® III Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 Long Leads N-Channel 650V 7160pF @ 400V 595W (Tc) 75A (Tc) 10V 23 mOhm @ 37.5A, 10V 4.5V @ 7.5mA 222nC @ 10V ±30V Super Junction
ML4426CS
Per Unit
$2.9400
RFQ
ON Semiconductor MOSFET N-CH 30V 80A TO-220AB TO-220-3 PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 N-Channel 30V 12240pF @ 15V 254W (Tc) 80A (Tc) 4.5V, 10V 2.5 mOhm @ 80A, 10V 2.5V @ 250µA 222nC @ 10V ±20V -
MJD45VH10G
Per Unit
$21.2400
RFQ
ON Semiconductor MOSFET N-CH 650V 75A TO247 TO-247-4 SuperFET® III Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-4L N-Channel 650V 7160pF @ 400V 595W (Tc) 75A (Tc) 10V 23 mOhm @ 37.5A, 10V 4.5V @ 7.5mA 222nC @ 10V ±30V -
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