- Mounting Type :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET N-CH 60V 65A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 60V | 2410pF @ 25V | 3.75W (Ta), 150W (Tc) | 65A (Tc) | 10V | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 65nC @ 10V | ±25V | - | |||||
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ON Semiconductor | MOSFET N-CH 120V 32A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 120V | 1860pF @ 25V | 3.75W (Ta), 150W (Tc) | 32A (Tc) | 10V | 50 mOhm @ 16A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 120V 32A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 120V | 1860pF @ 25V | 3.75W (Ta), 150W (Tc) | 32A (Tc) | 10V | 50 mOhm @ 16A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 60V 65A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 60V | 2410pF @ 25V | 3.75W (Ta), 150W (Tc) | 65A (Tc) | 10V | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 65nC @ 10V | ±25V | - |