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Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
ME4420
Per Unit
$0.5190
RFQ
ON Semiconductor MOSFET N-CH 100V 15.3A DPAK TO-252-5, DPak (4 Leads + Tab), TO-252AD PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252-5 N-Channel 100V 1465pF @ 25V 42W (Tc) 15.3A (Tc) 5V, 10V 75 mOhm @ 12A, 10V 2.5V @ 250µA 28.9nC @ 10V ±20V -
ME2206AM6G-N
Per Unit
$0.3881
RFQ
ON Semiconductor MOSFET N-CH 100V 6.8A TO252-5L TO-252-5, DPak (4 Leads + Tab), TO-252AD PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252-5 N-Channel 100V 225pF @ 50V 14.9W (Tc) 6.8A (Tc) 5V, 10V 160 mOhm @ 3.4A, 10V 2.8V @ 250µA 3.61nC @ 10V ±20V -
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