- Package / Case :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Diodes Incorporated | MOSFET NCH 40V 100A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | P-Channel | 60V | 2569pF @ 30V | 3.2W | 35A (Tc) | 4.5V, 10V | 33 mOhm @ 10A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET BVDSS: 41V 60V SOT223 | 8-PowerTDFN | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PowerDI5060-8 | P-Channel | 12V | 6334pF @ 10V | 3.2W | 80A (Tc) | 2.5V, 4.5V | 6 mOhm @ 15A, 4.5V | 1V @ 250µA | 124nC @ 8V | ±8V | - | |||||
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Diodes Incorporated | MOSFET P-CHANNEL 30V 50A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | P-Channel | 60V | 2569pF @ 30V | 3.2W | 35A (Tc) | 4.5V, 10V | 33 mOhm @ 10A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET NCH 60V 16.3A TO252 | 8-PowerTDFN | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PowerDI5060-8 | P-Channel | 12V | 6334pF @ 10V | 3.2W | 80A (Tc) | 2.5V, 4.5V | 6 mOhm @ 15A, 4.5V | 1V @ 250µA | 124nC @ 8V | ±8V | - |