Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SGM8701YN5G/TR
Per Unit
$0.9268
RFQ
Diodes Incorporated MOSFET N-CH 60V 100A POWERDI5060 8-PowerTDFN Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PowerDI5060-8 N-Channel 60V 4515pF @ 30V 2.6W (Ta), 138W (Tc) 100A (Ta) 4.5V, 10V 3.1 mOhm @ 25A, 10V 3V @ 250µA 47.4nC @ 4.5V ±20V -
SGM8622XMS/TR
Per Unit
$0.7400
RFQ
Diodes Incorporated MOSFET N-CH 60V 1.6A SOT223 8-PowerTDFN Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PowerDI5060-8 N-Channel 40V 6771pF @ 20V 2.3W 100A (Ta) 4.5V, 10V 1.8 mOhm @ 25A, 10V 3V @ 250µA 116.1nC @ 10V ±20V -
Page 1 / 1