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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PDTC124XT
RFQ
ON Semiconductor INTEGRATED CIRCUIT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D2PAK-3 P-Channel 30V 4.9nF @ 25V 125W (Tc) 50A (Tc) 5V 25 mOhm @ 25A, 5V 2V @ 250µA 100nC @ 5V ±15V -
ME2108C33M5G
Per Unit
$0.3316
RFQ
ON Semiconductor MOSFET N-CH 60V 3A SOT223 TO-261-4, TO-261AA Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs SOT-223 N-Channel 60V 440pF @ 25V 1.3W (Ta) 3A (Ta) 5V 120 mOhm @ 1.5A, 5V 2V @ 250µA 15nC @ 5V ±15V -
MC33290DR2G
Per Unit
$0.3659
RFQ
ON Semiconductor MOSFET N-CH 60V 3A SOT223 TO-261-4, TO-261AA Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active SOT-223 N-Channel 60V 440pF @ 25V 1.3W (Ta) 3A (Ta) 5V 120 mOhm @ 1.5A, 5V 2V @ 250µA 15nC @ 5V ±15V -
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