- Package / Case :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 35A TO220NIS | TO-220-3 Full Pack | U-MOSIII | Bulk | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-220NIS | N-Channel | 60V | 5120pF @ 10V | 35W (Tc) | 35A (Ta) | 4V, 10V | 12.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 91nC @ 10V | ±20V | - | ||||
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.5A VS6 2-3T1A | SOT-23-6 Thin, TSOT-23-6 | U-MOSIII | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | VS-6 (2.9x2.8) | P-Channel | 20V | 1430pF @ 10V | 700mW (Ta) | 5.5A (Ta) | 1.8V, 4.5V | 40 mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | ±8V | - |