- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® SO-8 | N-Channel | 30V | 2.52nF @ 15V | 5W (Ta), 48W (Tc) | 28.6A (Ta), 60A (Tc) | 4.5V, 10V | 3.4 mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | Schottky Diode (Body) | |||||
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Vishay Siliconix | MOSFET N-CH 600V 1.4A TO252AA | SkyFET®, TrenchFET® Gen III | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® SO-8 | N-Channel | 30V | 4.735nF @ 15V | 6.25W (Ta), 104W (Tc) | 40.6A (Ta), 60A (Tc) | 4.5V, 10V | 2.1 mOhm @ 20A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | Schottky Diode (Body) | |||||
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Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PowerPAK® SO-8 | N-Channel | 30V | 2.52nF @ 15V | 5W (Ta), 48W (Tc) | 28.6A (Ta), 60A (Tc) | 4.5V, 10V | 3.4 mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | Schottky Diode (Body) |