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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
AO4900A
Per Unit
$0.2066
RFQ
Alpha Omega Semiconductor Inc. MOSFET N-CH 300V 0.9A 8DFN 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOIC P-Channel 12V 1370pF @ 6V 2.5W (Ta) 9A (Ta) 1.5V, 4.5V 19 mOhm @ 9A, 4.5V 900mV @ 250µA 18nC @ 4.5V ±8V
AS2850AT
Per Unit
$0.2111
RFQ
Alpha Omega Semiconductor Inc. MOSFET N-CH 30V 20A 8SOIC 6-UDFN Exposed Pad - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-DFN-EP (2x2) P-Channel 12V 1370pF @ 6V 2.8W (Ta) 8A (Ta) 1.5V, 4.5V 21 mOhm @ 8A, 4.5V 900mV @ 250µA 18nC @ 4.5V ±8V
AO4453
Per Unit
$0.2111
RFQ
Alpha Omega Semiconductor Inc. MOSFET P-CH 12V 9A 8SOIC 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOIC P-Channel 12V 1370pF @ 6V 2.5W (Ta) 9A (Ta) 1.5V, 4.5V 19 mOhm @ 9A, 4.5V 900mV @ 250µA 18nC @ 4.5V ±8V
AON2403
Per Unit
$0.2111
RFQ
Alpha Omega Semiconductor Inc. MOSFET P-CH 12V 8A DFN2X2B 6-UDFN Exposed Pad - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-DFN-EP (2x2) P-Channel 12V 1370pF @ 6V 2.8W (Ta) 8A (Ta) 1.5V, 4.5V 21 mOhm @ 8A, 4.5V 900mV @ 250µA 18nC @ 4.5V ±8V
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