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IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 40V | 8800pF @ 20V | 2.5W (Ta), 125W (Tc) | 30A (Ta), 100A (Tc) | 10V | 1.9 mOhm @ 50A, 10V | 4V @ 85µA | 108nC @ 10V | ±20V | - | ||||||
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Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 40V | 8800pF @ 20V | 2.5W (Ta), 125W (Tc) | 30A (Ta), 100A (Tc) | 10V | 1.9 mOhm @ 50A, 10V | 4V @ 85µA | 108nC @ 10V | ±20V | - |