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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ROHM Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | 8-PowerVDFN | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | 8-HSMT (3.2x3) | P-Channel | 30V | 3200pF @ 15V | 2W (Ta) | 12A (Ta) | 4.5V, 10V | 8 mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | ±20V | - | |||||
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ROHM Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | 8-PowerVDFN | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | 8-HSMT (3.2x3) | P-Channel | 30V | 3200pF @ 15V | 2W (Ta) | 12A (Ta) | 4.5V, 10V | 8 mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 30V | 3200pF @ 15V | 68W (Tc) | 50A (Tc) | 4.5V, 10V | 5.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-11 | N-Channel | 30V | 3200pF @ 15V | 68W (Tc) | 50A (Tc) | 4.5V, 10V | 5 mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 50A TO-220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 30V | 3200pF @ 15V | 68W (Tc) | 50A (Tc) | 4.5V, 10V | 5.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 25V 90A TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 25V | 3200pF @ 15V | 94W (Tc) | 90A (Tc) | 4.5V, 10V | 4.2 mOhm @ 60A, 10V | 2V @ 40µA | 26nC @ 5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 50A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | N-Channel | 30V | 3200pF @ 15V | 68W (Tc) | 50A (Tc) | 4.5V, 10V | 5 mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 90A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 30V | 3200pF @ 15V | 94W (Tc) | 90A (Tc) | 4.5V, 10V | 4.8 mOhm @ 60A, 10V | 2V @ 40µA | 25nC @ 5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 90A TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 25V | 3200pF @ 15V | 94W (Tc) | 90A (Tc) | 4.5V, 10V | 4.2 mOhm @ 60A, 10V | 2V @ 40µA | 26nC @ 5V | ±20V | - |