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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IXTP12N50PM
Per Unit
$2.5026
RFQ
IXYS MOSFET N-CH 500V 6A TO-220 TO-220-3 Polar™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB N-Channel 500V 1830pF @ 25V 50W (Tc) 6A (Tc) 10V 500 mOhm @ 6A, 10V 5.5V @ 250µA 29nC @ 10V ±30V -
IXFP16N60P3
Per Unit
$4.2500
RFQ
IXYS MOSFET N-CH 600V 16A TO-220 TO-220-3 HiPerFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 N-Channel 600V 1830pF @ 25V 347W (Tc) 16A (Tc) 10V 470 mOhm @ 500mA, 10V 5V @ 1.5mA 36nC @ 10V ±30V -
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