- Mounting Type :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- FET Feature :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO262-3 | N-Channel | 650V | 710pF @ 100V | 83W (Tc) | 10.6A (Tc) | 10V | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 650V | 710pF @ 100V | 31W (Tc) | 10.6A (Tc) | 10V | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 900V 5.1A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO262-3 | N-Channel | 900V | 710pF @ 100V | 83W (Tc) | 5.1A (Tc) | 10V | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 650V | 710pF @ 100V | 31W (Tc) | - | 10V | 400 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | Super Junction | ||||
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Infineon Technologies | MOSFET N-CH 900V 5.1A 10-220FP | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-FP | N-Channel | 900V | 710pF @ 100V | 31W (Tc) | 5.1A (Tc) | 10V | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-FP | N-Channel | 650V | 710pF @ 100V | 31W (Tc) | 10.6A (Tc) | 10V | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 900V 5.1A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 900V | 710pF @ 100V | 83W (Tc) | 5.1A (Tc) | 10V | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3 | N-Channel | 650V | 710pF @ 100V | 83W (Tc) | 10.6A (Tc) | 10V | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 900V 5.1A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | N-Channel | 900V | 710pF @ 100V | 83W (Tc) | 5.1A (Tc) | 10V | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-FP | N-Channel | 650V | 710pF @ 100V | 31W (Tc) | 10.6A (Tc) | 10V | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | - |