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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 60V PPAK 1212-8S | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8S | N-Channel | 100V | 2140pF @ 50V | 5W (Ta), 65.7W (Tc) | 12.5A (Ta), 45.3A (Tc) | 7.5V, 10V | 12.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 42nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 100V PPAK 1212-8S | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8S | N-Channel | 100V | 2140pF @ 50V | 5W (Ta), 65.7W (Tc) | 12.5A (Ta), 45.3A (Tc) | 7.5V, 10V | 12.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 42nC @ 10V | ±20V | - |