- Manufacture :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ROHM Semiconductor | MOSFET N-CH 20V 6.5A TSMT8 | 8-PowerVDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-HSMT (3.2x3) | N-Channel | 30V | 3500pF @ 15V | 2W (Ta), 20W (Tc) | 39A (Tc) | 4.5V, 10V | 3.9 mOhm @ 18A, 10V | 2.5V @ 1mA | 37nC @ 4.5V | ±20V | - | ||||||
|
ROHM Semiconductor | MOSFET N-CH 20V 6.5A TSMT8 | 8-PowerVDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-HSMT (3.2x3) | N-Channel | 30V | 3500pF @ 15V | 2W (Ta), 20W (Tc) | 39A (Tc) | 4.5V, 10V | 3.9 mOhm @ 18A, 10V | 2.5V @ 1mA | 37nC @ 4.5V | ±20V | - | ||||||
|
Infineon Technologies | MOSFET N-CH 30V 93A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 30V | 3500pF @ 15V | 2.5W (Ta), 57W (Tc) | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.2 mOhm @ 30A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | - |