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Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
OB2363MP
RFQ
ON Semiconductor MOSFET N-CH 700V 9.5A TO-3PF SC-94 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3PF N-Channel 700V 3600pF @ 25V 120W (Tc) 9.5A (Tc) 10V 560 mOhm @ 4.8A, 10V 5V @ 250µA 90nC @ 10V ±30V -
OB2354AP
RFQ
ON Semiconductor MOSFET N-CH 600V 11.2A TO-3PF SC-94 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3PF N-Channel 600V 3600pF @ 25V 120W (Tc) 11.2A (Tc) 10V 380 mOhm @ 5.6A, 10V 5V @ 250µA 90nC @ 10V ±30V -
NZX30B133
RFQ
ON Semiconductor MOSFET P-CH 60V 38A TO-3PF SC-94 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-3PF P-Channel 60V 3600pF @ 25V 100W (Tc) 38A (Tc) 10V 26 mOhm @ 19A, 10V 4V @ 250µA 110nC @ 10V ±25V -
FQAF19N60
RFQ
ON Semiconductor MOSFET N-CH 600V 11.2A TO-3PF SC-94 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3PF N-Channel 600V 3600pF @ 25V 120W (Tc) 11.2A (Tc) 10V 380 mOhm @ 5.6A, 10V 5V @ 250µA 90nC @ 10V ±30V -
FQAF47P06
RFQ
ON Semiconductor MOSFET P-CH 60V 38A TO-3PF SC-94 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-3PF P-Channel 60V 3600pF @ 25V 100W (Tc) 38A (Tc) 10V 26 mOhm @ 19A, 10V 4V @ 250µA 110nC @ 10V ±25V -
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