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Packaging :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SBRT15U100SP5
Per Unit
$0.1481
RFQ
Diodes Incorporated MOSFET N-CH 30V 9.9A UDFN2020-6 6-UDFN Exposed Pad - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type F) N-Channel 30V 570pF @ 50V 2.1W (Ta) 7A (Ta) 2.5V, 10V 28 mOhm @ 4A, 10V 1.4V @ 250µA 13.3nC @ 10V ±12V -
STP9NM50N
RFQ
STMicroelectronics MOSFET N-CH 500V 7.5A TO-220 TO-220-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB N-Channel 500V 570pF @ 50V 70W (Tc) 5A (Tc) 10V 560 mOhm @ 3.7A, 10V 4V @ 250µA 20nC @ 10V ±25V -
STF9NM50N
RFQ
STMicroelectronics MOSFET N-CH 500V 7.5A TO-220FP TO-220-3 Full Pack MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220FP N-Channel 500V 570pF @ 50V 25W (Tc) 5A (Tc) 10V 560 mOhm @ 3.7A, 10V 4V @ 250µA 20nC @ 10V ±25V -
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