- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 75V 142A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 75V | 7750pF @ 25V | 380W (Tc) | 142A (Tc) | 10V | 7.5 mOhm @ 85A, 10V | 4V @ 250µA | 320nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7-3 | N-Channel | 80V | 7750pF @ 25V | 208W (Tc) | 160A (Tc) | 10V | 3.2 mOhm @ 100A, 10V | 4V @ 150µA | 112nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 75V 142A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 75V | 7750pF @ 25V | 380W (Tc) | 142A (Tc) | 10V | 7.5 mOhm @ 85A, 10V | 4V @ 250µA | 320nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 75V 142A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 75V | 7750pF @ 25V | 380W (Tc) | 142A (Tc) | 10V | 7.5 mOhm @ 85A, 10V | 4V @ 250µA | 320nC @ 10V | ±20V | - |