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1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | I-PAK | P-Channel | 55V | 660pF @ 50V | 79W (Tc) | 20A (Tc) | 4.5V, 10V | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | P-Channel | 55V | 660pF @ 50V | 33W (Tc) | 14A (Tc) | 4.5V, 10V | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | P-Channel | 55V | 660pF @ 50V | 33W (Tc) | 14A (Tc) | 4.5V, 10V | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | P-Channel | 55V | 660pF @ 50V | 79W (Tc) | 20A (Tc) | 4.5V, 10V | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | - | |||||
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3,902
In-stock
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ON Semiconductor | MOSFET N-CH 100V 2.6A 6-SSOT | SOT-23-6 Thin, TSOT-23-6 | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SuperSOT™-6 | N-Channel | 100V | 660pF @ 50V | 1.6W (Ta) | 2.6A (Ta) | 6V, 10V | 125 mOhm @ 2.6A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | - | ||||
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ON Semiconductor | MOSFET N-CH 100V 2.6A SSOT-6 | SOT-23-6 Thin, TSOT-23-6 | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SuperSOT™-6 | N-Channel | 100V | 660pF @ 50V | 1.6W (Ta) | 2.6A (Ta) | 6V, 10V | 125 mOhm @ 2.6A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 55V 20A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | I-PAK | P-Channel | 55V | 660pF @ 50V | 79W (Tc) | 20A (Tc) | 4.5V, 10V | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | P-Channel | 55V | 660pF @ 50V | 33W (Tc) | 14A (Tc) | 4.5V, 10V | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | - |