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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TLE8882
RFQ
Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Discontinued at Digi-Key 8-SO N-Channel 30V 3710pF @ 15V 2.5W (Ta) 19A (Ta) 4.5V, 10V 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V ±20V -
SPP30N03L
RFQ
Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 30V 3710pF @ 15V 2.5W (Ta) 19A (Ta) 4.5V, 10V 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V ±20V -
SPP24N60
RFQ
Infineon Technologies MOSFET N-CH 55V 26A DPAK 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 30V 3710pF @ 15V 2.5W (Ta) 19A (Ta) 4.5V, 10V 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V ±20V -
IRF7834TR
RFQ
Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 30V 3710pF @ 15V 2.5W (Ta) 19A (Ta) 4.5V, 10V 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V ±20V -
IRF7834
RFQ
Infineon Technologies MOSFET N-CH 30V 19A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 30V 3710pF @ 15V 2.5W (Ta) 19A (Ta) 4.5V, 10V 4.5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V ±20V -
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