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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPP70N10S3-12 3N1012
Per Unit
$0.6373
RFQ
Infineon Technologies MOSFET N-CH 75V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-Pak N-Channel 75V 2190pF @ 25V 110W (Tc) 42A (Tc) 10V 16 mOhm @ 32A, 10V 4V @ 100µA 75nC @ 10V ±20V -
IRFU2307ZPBF
RFQ
Infineon Technologies MOSFET N-CH 75V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) N-Channel 75V 2190pF @ 25V 110W (Tc) 42A (Tc) 10V 16 mOhm @ 32A, 10V 4V @ 100µA 75nC @ 10V ±20V -
IRFR2307Z
RFQ
Infineon Technologies MOSFET N-CH 75V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 75V 2190pF @ 25V 110W (Tc) 42A (Tc) 10V 16 mOhm @ 32A, 10V 4V @ 100µA 75nC @ 10V ±20V -
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