- Package / Case :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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NXP USA Inc. | MOSFET N-CH 20V 0.97A SOT416 | SC-75, SOT-416 | TrenchMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SC-75 | N-Channel | 20V | 34pF @ 20V | 530mW (Tc) | 970mA (Tc) | 2.5V, 4.5V | 350 mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | ±12V | - | |||||
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NXP USA Inc. | MOSFET N-CH 20V 1A SOT323 | SC-70, SOT-323 | TrenchMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-323-3 | N-Channel | 20V | 34pF @ 20V | 560mW (Tc) | 1A (Tc) | 2.5V, 4.5V | 350 mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | ±12V | - |