- Manufacture :
- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CHAN 200V POWERPAK SO-8 | 8-PowerTDFN | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 40V | 5250pF @ 25V | 68W (Tc) | 75A (Tc) | 10V | 2.4 mOhm @ 10A, 10V | 3.5V @ 250µA | 100nC @ 10V | ±20V | |||||
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Renesas Electronics America | MOSFET N-CH 55V 55A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 175°C (TJ) | Obsolete | TO-252 (MP-3ZK) | N-Channel | 55V | 5250pF @ 25V | 1.2W (Ta), 77W (Tc) | 55A (Tc) | 10V | 10 mOhm @ 28A, 10V | - | 90nC @ 10V | ±20V |