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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PCA9555AHF
RFQ
ON Semiconductor MOSFET N-CH 100V TO-220-3 TO-220-3 PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 2695pF @ 50V 188W (Tc) 96A (Tc) 10V 8.5 mOhm @ 96A, 10V 4V @ 250µA 40nC @ 10V ±20V -
MMPZ5248BGP
Per Unit
$2.3200
RFQ
ON Semiconductor MOSFET N-CH 100V 40A TO-220F TO-220-3 Full Pack PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220F-3 N-Channel 100V 2695pF @ 50V 33.3W (Tc) 40A (Tc) 10V 8.5 mOhm @ 40A, 10V 4V @ 250µA 40nC @ 10V ±20V -
MMBT4403G
Per Unit
$2.3500
RFQ
ON Semiconductor MOSFET N-CH 100V 96A TO-220-3 TO-220-3 PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 N-Channel 100V 2695pF @ 50V 188W (Tc) 96A (Tc) 10V 8.5 mOhm @ 96A, 10V 4V @ 250µA 40nC @ 10V ±20V -
FDP085N10A
RFQ
ON Semiconductor MOSFET N-CH 100V TO-220-3 TO-220-3 PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 2695pF @ 50V 188W (Tc) 96A (Tc) 10V 8.5 mOhm @ 96A, 10V 4V @ 250µA 40nC @ 10V ±20V -
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