- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 60V 120A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263 (D²Pak) | N-Channel | 200V | 5850pF @ 25V | 375W (Tc) | 60A (Tc) | 10V | 35 mOhm @ 20A, 10V | 3.5V @ 250µA | 135nC @ 10V | ±20V | |||||
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Renesas Electronics America | MOSFET N-CH 40V 90A TO-220 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | 175°C (TJ) | Active | TO-263 | N-Channel | 40V | 5850pF @ 25V | 1.8W (Ta), 147W (Tc) | 90A (Tc) | 10V | 2.95 mOhm @ 45A, 5V | 4V @ 250µA | 102nC @ 10V | ±20V |