- Applied Filters :
0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 6A TO251 | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-251 (IPAK) | N-Channel | 600V | 1248pF @ 25V | 89W (Tc) | 6A (Tc) | 10V | 1.25 Ohm @ 3A, 10V | 4V @ 250µA | 20.7nC @ 10V | ±30V |