- Manufacture :
- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CHAN 12V SOT23 | TO-236-3, SC-59, SOT-23-3 | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 40V | 555pF @ 10V | 3W (Tc) | 8A (Tc) | 4.5V, 10V | 31 mOhm @ 6A, 10V | 2.5V @ 250µA | 13nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET P-CH 30V 1.4A SOT23-3 | SOT-23-6 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-26 | N-Channel | 20V | 555pF @ 10V | 1W (Ta) | 3.3A (Ta) | 1.5V, 4.5V | 55 mOhm @ 6A, 4.5V | 1V @ 250µA | - | ±8V | - | |||||
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ON Semiconductor | MOSFET P-CH 20V 2.6A 4-WLCSP | 4-XFBGA, WLCSP | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4-WLCSP (0.8x0.8) | P-Channel | 20V | 555pF @ 10V | 1.3W (Ta) | 2.6A (Ta) | 1.5V, 4.5V | 140 mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8nC @ 4.5V | ±8V | - |