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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STRW6853
Per Unit
$1.4108
RFQ
Sanken MOSFET N-CH 50V 50A TO-220F TO-220-3 Full Pack - Bulk MOSFET (Metal Oxide) Through Hole - Active TO-220F N-Channel 450V 720pF @ 10V 35W (Tc) 7A (Ta) 10V 1.1 Ohm @ 3.5A, 10V 4V @ 1µA - ±30V -
MSD6A600HTAB
Per Unit
$0.3896
RFQ
ON Semiconductor -20V -3.1A 95 O PCH ER T 6-VDFN Exposed Pad PowerTrench® - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-MicroFET (2x2) P-Channel 20V 720pF @ 10V 1.4W (Ta) 3.1A (Ta) 2.5V, 4.5V 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V ±12V Schottky Diode (Isolated)
MDR775M-T
Per Unit
$0.2956
RFQ
ON Semiconductor MOSFET P-CH 20V 3.1A 2X2MLP 6-VDFN Exposed Pad PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-MicroFET (2x2) P-Channel 20V 720pF @ 10V 1.4W (Tj) 3.1A (Ta) 2.5V, 4.5V 95 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10nC @ 4.5V ±12V Schottky Diode (Isolated)
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