- Manufacture :
- Series :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 100V | 2450pF @ 25V | 3.8W (Ta), 200W (Tc) | 59A (Tc) | 10V | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | ±30V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 100V | 2450pF @ 25V | 3.8W (Ta), 200W (Tc) | 59A (Tc) | 10V | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | ±30V | - | |||||
|
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 100V | 2450pF @ 25V | 3.8W (Ta), 200W (Tc) | 59A (Tc) | 10V | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | ±30V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D2PAK | N-Channel | 100V | 2450pF @ 25V | 3.8W (Ta), 200W (Tc) | 59A (Tc) | 10V | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 250V 25.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 250V | 2450pF @ 25V | 3.13W (Ta), 180W (Tc) | 25.5A (Tc) | 10V | 110 mOhm @ 12.75A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | - | |||||
|
|
ON Semiconductor | MOSFET N-CH 250V 14A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220F | N-Channel | 250V | 2450pF @ 25V | 55W (Tc) | 14A (Tc) | 10V | 110 mOhm @ 7A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 250V 25.5A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I2PAK (TO-262) | N-Channel | 250V | 2450pF @ 25V | 3.13W (Ta), 180W (Tc) | 25.5A (Tc) | 10V | 110 mOhm @ 12.75A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 250V 25.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 250V | 2450pF @ 25V | 180W (Tc) | 25.5A (Tc) | 10V | 110 mOhm @ 12.75A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 250V 27A TO-3P | TO-3P-3, SC-65-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-3PN | N-Channel | 250V | 2450pF @ 25V | 210W (Tc) | 27A (Tc) | 10V | 110 mOhm @ 13.5A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 250V 14A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F | N-Channel | 250V | 2450pF @ 25V | 55W (Tc) | 14A (Tc) | 10V | 110 mOhm @ 7A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | - |