- Manufacture :
- Series :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3 | N-Channel | 200V | 2350pF @ 100V | 136W (Tc) | 34A (Tc) | 10V | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 250V 25A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3 | N-Channel | 250V | 2350pF @ 100V | 136W (Tc) | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 200V 34A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 200V | 2350pF @ 100V | 136W (Tc) | 34A (Tc) | 10V | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 200V 34A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 200V | 2350pF @ 100V | 136W (Tc) | 34A (Tc) | 10V | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | |||||
|
|
Infineon Technologies | MOSFET N-CH 200V 36A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 200V | 2350pF @ 100V | 125W (Tc) | 36A (Tc) | 10V | 32 mOhm @ 36A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | |||||
|
|
Infineon Technologies | MOSFET N-CH 250V 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | N-Channel | 250V | 2350pF @ 100V | 136W (Tc) | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | |||||
|
|
|
Infineon Technologies | MOSFET N-CH 250V 25A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 250V | 2350pF @ 100V | 125W (Tc) | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | |||||
|
|
|
Infineon Technologies | MOSFET N-CH 250V 25A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 250V | 2350pF @ 100V | 136W (Tc) | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 250V 25A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 250V | 2350pF @ 100V | 136W (Tc) | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | |||||
|
|
|
Infineon Technologies | MOSFET N-CH 200V 34A | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | N-Channel | 200V | 2350pF @ 100V | 136W (Tc) | 34A (Tc) | 10V | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | - | |||||
|
|
ON Semiconductor | MOSFET N-CH 800V 11A TO220 | TO-220-3 Full Pack | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F-3 | N-Channel | 800V | 2350pF @ 100V | 35.7W (Tc) | 11A (Tc) | 10V | 400 mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56nC @ 10V | ±20V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 800V 11A ZNR | TO-220-3 Full Pack | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F-3 | N-Channel | 800V | 2350pF @ 100V | 35.7W (Tc) | 11A (Tc) | 10V | 400 mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56nC @ 10V | ±20V | - |