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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET P-CH 20V 2.3A 6-WDFN | 6-WDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-WDFN (2x2) | P-Channel | 20V | 531pF @ 10V | 710mW (Ta) | 2.3A (Ta) | 1.8V, 4.5V | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | ±8V | Schottky Diode (Isolated) | |||||
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ON Semiconductor | MOSFET P-CH 20V 2.3A 6-WDFN | 6-WDFN Exposed Pad | µCool™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-WDFN (2x2) | P-Channel | 20V | 531pF @ 10V | 710mW (Ta) | 2.3A (Ta) | 1.8V, 4.5V | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | ±8V | Schottky Diode (Isolated) |