- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 300V 76A T-MAX | TO-247-3 Variant | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | T-MAX™ [B2] | N-Channel | 300V | 10200pF @ 25V | - | 76A (Tc) | - | 40 mOhm @ 500mA, 10V | 4V @ 2.5mA | 425nC @ 10V | - | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | TO-247-3 Variant | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | T-MAX™ [B2] | N-Channel | 200V | 10200pF @ 25V | 520W (Tc) | 100A (Tc) | 10V | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | TO-247-3 Variant | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | T-MAX™ [B2] | N-Channel | 200V | 10200pF @ 25V | 520W (Tc) | 100A (Tc) | 10V | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 300V 70A SOT-227 | SOT-227-4, miniBLOC | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 300V | 10200pF @ 25V | 450W (Tc) | 70A (Tc) | 10V | 40 mOhm @ 500mA, 10V | 4V @ 2.5mA | 425nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 300V 70A SOT-227 | SOT-227-4, miniBLOC | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 300V | 10200pF @ 25V | 450W (Tc) | 70A (Tc) | 10V | 40 mOhm @ 500mA, 10V | 4V @ 2.5mA | 425nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | TO-264-3, TO-264AA | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 [L] | N-Channel | 200V | 10200pF @ 25V | 520W (Tc) | 100A (Tc) | 10V | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | TO-264-3, TO-264AA | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 [L] | N-Channel | 200V | 10200pF @ 25V | 520W (Tc) | 100A (Tc) | 10V | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | - |