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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
0 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
SC8803G5
Per Unit
$30.3900
RFQ
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 190A SOT227 SOT-227-4, miniBLOC - - MOSFET (Metal Oxide) Chassis Mount -55°C ~ 175°C (TJ) Active SOT-227 N-Channel 150V 13700pF @ 25V 909W (Tc) 400A (Tc) 10V 2.75 mOhm @ 200A, 10V 5.4V @ 1mA 250nC @ 10V ±20V
LE79232TCT
RFQ
Microsemi Corporation MOSFET N-CH 200V 175A SP4 SP4 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP4 N-Channel 200V 13700pF @ 25V 694W (Tc) 175A (Tc) 10V 12 mOhm @ 87.5A, 10V 5V @ 5mA 224nC @ 10V ±30V
LE792288DG
RFQ
Microsemi Corporation MOSFET N-CH 200V 175A SP4 SP4 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP4 N-Channel 200V 13700pF @ 25V 694W (Tc) 175A (Tc) 10V 12 mOhm @ 87.5A, 10V 5V @ 5mA 224nC @ 10V ±30V
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